BYR Achieve · 镜像论坛

在上一期热点文献推荐中，我们为您推荐了Transformer的最新发展前沿，包括半密集特征匹配Transformer及其在多视图几何中的应用，基于Transformer的任务感知弱监督目标定位，用于精确场景文本识别的图像-字符-单词Transformer，使用多模态Transformer生成情感视觉字幕，推送给相关领域的科研人员。本期我们为您选取了4篇文献，介绍半导体领域的最新发展前沿，包括用于像差校正3D摄影的集成成像传感器，光子集成的连续行波光参量放大器，用于互补电路的垂直有机电化学晶体管，接近二维半导体接触的量子极限，推送给相关领域的科研人员。文献一用于像差校正3D摄影的集成成像传感器 An integrated imaging sensor for aberration-corrected 3D photography Wu, Jiamin, etc. NATURE, 2022, 612(7938): 62–71 Planar digital image sensors facilitate broad applications in a wide range of areas, and the number of pixels has scaled up rapidly in recent years. However, the practical performance of imaging systems is fundamentally limited by spatially nonuniform optical aberrations originating from imperfect lenses or environmental disturbances. Here we propose an integrated scanning light-field imaging sensor, termed a meta-imaging sensor, to achieve high-speed aberration-corrected three-dimensional photography for universal applications without additional hardware modifications. Instead of directly detecting a two-dimensional intensity projection, the meta-imaging sensor captures extra-fine four-dimensional light-field distributions through a vibrating coded microlens array, enabling flexible and precise synthesis of complex-field-modulated images in post-processing. Using the sensor, we achieve high-performance photography up to a gigapixel with a single spherical lens without a data prior, leading to orders-of-magnitude reductions in system capacity and costs for optical imaging. Even in the presence of dynamic atmosphere turbulence, the meta-imaging sensor enables multisite aberration correction across 1,000 arcseconds on an 80-centimetre ground-based telescope without reducing the acquisition speed, paving the way for high-resolution synoptic sky surveys. Moreover, high-density accurate depth maps can be retrieved simultaneously, facilitating diverse applications from autonomous driving to industrial inspections. 阅读原文：https://www.nature.com/articles/s41586-022-05306-8 文献二光子集成的连续行波光参量放大器 A photonic integrated continuous-travelling-wave parametric amplifier Riemensberger, Johann, etc. NATURE, 2022, 612(7938): 56–61 The ability to amplify optical signals is of pivotal importance across science and technology typically using rare-earth-doped fibres or gain media based on III-V semiconductors. A different physical process to amplify optical signals is to use the Kerr nonlinearity of optical fibres through parametric interactions. Pioneering work demonstrated continuous-wave net-gain travelling-wave parametric amplification in fibres, enabling, for example, phase-sensitive (that is, noiseless) amplification, link span increase, signal regeneration and nonlinear phase noise mitigation. Despite great progress, all photonic integrated circuit-based demonstrations of net parametric gain have necessitated pulsed lasers, limiting their practical use. Until now, only bulk micromachined periodically poled lithium niobate (PPLN) waveguide chips have achieved continuous-wave gain, yet their integration with silicon-wafer-based photonic circuits has not been shown. Here we demonstrate a photonic-integrated-circuit-based travelling-wave optical parametric amplifier with net signal gain in the continuous-wave regime. Using ultralow-loss, dispersion-engineered, metre-long, Si3N4 photonic integrated circuits on a silicon chip of dimensions 5 x 5 mm2, we achieve a continuous parametric gain of 12 dB that exceeds both the on-chip optical propagation loss and fibre-chip-fibre coupling losses in the telecommunication C band. Our work demonstrates the potential of photonic-integrated-circuit-based parametric amplifiers that have lithographically controlled gain spectrum, compact footprint, resilience to optical feedback and quantum-limited performance, and can operate in the wavelength ranges from visible to mid-infrared and outside conventional rare-earth amplification bands. 阅读原文：https://www.nature.com/articles/s41586-022-05329-1 文献三用于互补电路的垂直有机电化学晶体管 Vertical organic electrochemical transistors for complementary circuits Huang, Wei, etc. NATURE, 2023, 613(7944): 496–502 Organic electrochemical transistors (OECTs) and OECT-based circuitry offer great potential in bioelectronics, wearable electronics and artificial neuromorphic electronics because of their exceptionally low driving voltages (< 1 V), low power consumption (< 1 mu W), high transconductances (> 10 mS) and biocompatibility. However, the successful realization of critical complementary logic OECTs is currently limited by temporal and/or operational instability, slow redox processes and/or switching, incompatibility with high-density monolithic integration and inferior n-type OECT performance. Here we demonstrate p- and n-type vertical OECTs with balanced and ultra-high performance by blending redox-active semiconducting polymers with a redox-inactive photocurable and/or photopatternable polymer to form an ion-permeable semiconducting channel, implemented in a simple, scalable vertical architecture that has a dense, impermeable top contact. Footprint current densities exceeding 1 kA cm-2 at less than +/- 0.7 V, transconductances of 0.2-0.4 S, short transient times of less than 1 ms and ultra-stable switching (> 50,000 cycles) are achieved in, to our knowledge, the first vertically stacked complementary vertical OECT logic circuits. This architecture opens many possibilities for fundamental studies of organic semiconductor redox chemistry and physics in nanoscopically confined spaces, without macroscopic electrolyte contact, as well as wearable and implantable device applications. 阅读原文：https://www.nature.com/articles/s41586-022-05592-2 文献四接近二维半导体接触的量子极限 Approaching the quantum limit in two-dimensional semiconductor contacts Li, Weisheng, etc. NATURE, 2023, 613(7943): 274–279 The development of next-generation electronics requires scaling of channel material thickness down to the two-dimensional limit while maintaining ultralow contact resistance. Transition-metal dichalcogenides can sustain transistor scaling to the end of roadmap, but despite a myriad of efforts, the device performance remains contact-limited. In particular, the contact resistance has not surpassed that of covalently bonded metal–semiconductor junctions owing to the intrinsic van der Waals gap, and the best contact technologies are facing stability issues. Here we push the electrical contact of monolayer molybdenum disulfide close to the quantum limit by hybridization of energy bands with semi-metallic antimony (011?2) through strong van der Waals interactions. The contacts exhibit a low contact resistance of 42 ohm micrometres and excellent stability at 125 degrees Celsius. Owing to improved contacts, short-channel molybdenum disulfide transistors show current saturation under one-volt drain bias with an on-state current of 1.23 milliamperes per micrometre, an on/off ratio over 108 and an intrinsic delay of 74 femtoseconds. These performances outperformed equivalent silicon complementary metal–oxide–semiconductor technologies and satisfied the 2028 roadmap target. We further fabricate large-area device arrays and demonstrate low variability in contact resistance, threshold voltage, subthreshold swing, on/off ratio, on-state current and transconductance. The excellent electrical performance, stability and variability make antimony (011?2) a promising contact technology for transition-metal-dichalcogenide-based electronics beyond silicon. 阅读原文：https://www.nature.com/articles/s41586-022-05431-4

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