BYR Achieve · 镜像论坛

在第56期的前沿文献推荐中，介绍了晶圆级的单层晶体管；面向未来集成电路的二维材料的晶体管；二维材料集成电路的进展情况；兼顾迁移率和稳定性的氧化物薄膜晶体管。在本期文献推荐中，关注点着眼于半导体领域的最新进展，包括：用于超导逻辑的谐振超材料时钟分配网络；纳米机电声子晶体中的千兆赫兹拓扑谷霍尔效应；原子级厚度氧化铟晶体管；22 nm FinFET中的亚太赫兹收发器。上述文献供相关领域的科研人员参考。领域一用于超导逻辑的谐振超材料时钟分配网络 A resonant metamaterial clock distribution network for superconducting logic Joshua A. Strong Nature Electronics, 2022, 5: 171–177 Clock distribution is central to digital technology and influences circuit performance, interconnect overhead and efficiency. However, ensuring reliable clock distribution across large digital systems with low skew and jitter—and in the presence of device variations and thermal noise—is a design challenge. Here we report a superconducting metamaterial resonant clock network that can provide energy-efficient power delivery to large superconducting digital systems. The resonant clock network is based on a metamaterial design with an infinite-wavelength zeroth-order resonance mode and utilizes the ultralow Joule loss of superconductors at microwave frequencies. With this approach, we perform S-parameter measurements for a 10 GHz design and validate a digital reciprocal quantum logic circuit with 48,000 junctions operating at 3.5 GHz. The network supports uniform power distribution with less than 1 dB variation across a 3 × 3 mm2 active chip area and around 30% power efficiency. Static power dissipation is 28 μW, which is similar to that of active devices. https://www.nature.com/articles/s41928-022-00729-7 Fig. Conceptual design of the resonant clock network. 领域二纳米机电声子晶体中的千兆赫兹拓扑谷霍尔效应 Gigahertz topological valley Hall effect in nanoelectromechanical phononic crystals Qicheng Zhang, etc. Nature Electronics, 2022, 5: 157–163 Topological phononic crystals can manipulate elastic waves that propagate in solids without being backscattered, and could be used to develop integrated acousto-electronic systems for classical and quantum information processing. However, acoustic topological metamaterials have been mainly limited to macroscale systems that operate at low (kilohertz to megahertz) frequencies. Here we report a topological valley Hall effect in nanoelectromechanical aluminium nitride membranes at gigahertz (up to 1.06 GHz) frequencies. We visualize the propagation of elastic waves through phononic crystals with high sensitivity (10–100 fm) and spatial resolution (10–100 nm) using transmission-mode microwave impedance microscopy. The valley Hall edge states, which are protected by band topology, are observed in both real and momentum space. Robust valley-polarized transport is evident from wave transmission across local disorder and around sharp corners. We also show that the system can be used to create an acoustic beamsplitter. https://www.nature.com/articles/s41928-022-00732-y Fig. Demonstration of topological beamsplitting. 领域三原子级厚度氧化铟晶体管 Atomically thin indium oxide transistors Seong Keun Kim Nature Electronics, 2022, 5: 129-130 Indium oxide transistors with an ultrashort channel of less than 10 nm can be fabricated using atomic layer deposition, a technique that is compatible with complementary metal–oxide–semiconductor (CMOS) processes. https://www.nature.com/articles/s41928-022-00734-w Fig. Scaled In2O3 transistors. 领域四 22 nm FinFET中的亚太赫兹收发器 A sub-terahertz transceiver in 22 nm FinFET Matthew Parker, etc. Nature Electronics, 2022, 5 Transmitting data wirelessly at higher rates is increasingly demanded of communication and sensing technologies, and many transceivers now operate in the millimetre-wave or sub-terahertz (100–300 GHz) carrier frequency range. At the same time, it is also commercially important to have a fully integrated and low-cost implementation, such as by being produced using standard complementary metal–oxide–semiconductor (CMOS) technology. Researchers at Intel have now demonstrated a D-band (110–170 GHz) transceiver made in 22 nm CMOS FinFET technology. https://www.nature.com/articles/s41928-022-00741-x

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